文章
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4 December 2025
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4 December 2025
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4 December 2025
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4 December 2025
This paper focuses on the systems analysis of defects in silicon wafers, which are a critical factor limiting the reliability and yield of high-power devices. It examines diagnostic methods, defect classification, and modern technological approaches to their minimization, such as gettering and annealing. The aim of the study is to establish cause-and-effect relationships between technology, defects, and failures and to formulate quality control recommendations to improve production efficiency.
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4 December 2025
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4 December 2025
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4 December 2025
Using computer modeling methods for technological processes, a digital twin of the high-voltage, low-frequency p-i-n diode D053-7100, manufactured by JSC "Proton-Electrotex" (Oryol, Russia), was created. Through simulation of this diode, the dependence of its static and dynamic characteristics on the position of the maximum in the distribution of radiation defects formed during the irradiation of the diode's semiconductor structure with protons has been studied
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Architecture of the modern Driver of Power IGBT keys
24 January 2025
The article discusses the main parameters of IGBT drivers. Criteria for selecting a driver are given. Gate control schemes are considered. The main and extended protective functions and possible ways of their implementation are defined. Single drivers and drivers for controlling parallel-connected IGBTs are considered. The features of constructing a parallel driver are given.
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Modern Design solutions in high power IGBT modules
24 January 2025
The article discusses modern approaches to the design of power semiconductor modules. Using the example of devices with a 140 mm baseplate and the MIXM and MIXV modules developed by JSC Proton-Electrotex, it demonstrates how the design of these modules has evolved toward reducing the inductance of power circuits and optimizing the layout of external connections. The article also examines possible future directions in the development of IGBT module design, including major modernization of heat dissipation structures and the use of semiconductor chips with the capability to monitor temperature and instantaneous current values in real time.
