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  4 December 2025

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  4 December 2025

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  4 December 2025

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• Analysis of the influence of technological defects of silicon wafers on the reliability parameters of power semiconductor devices

  4 December 2025

  This paper focuses on the systems analysis of defects in silicon wafers, which are a critical factor limiting the reliability and yield of high-power devices. It examines diagnostic methods, defect classification, and modern technological approaches to their minimization, such as gettering and annealing. The aim of the study is to establish cause-and-effect relationships between technology, defects, and failures and to formulate quality control recommendations to improve production efficiency.

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  4 December 2025

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  4 December 2025

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• Influence of the radiation defect distribution in the base of a power diode in its static and dynamic characteristics

  4 December 2025

  Using computer modeling methods for technological processes, a digital twin of the high-voltage, low-frequency p-i-n diode D053-7100, manufactured by JSC "Proton-Electrotex" (Oryol, Russia), was created. Through simulation of this diode, the dependence of its static and dynamic characteristics on the position of the maximum in the distribution of radiation defects formed during the irradiation of the diode's semiconductor structure with protons has been studied

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