MOSFET (SiC) 模块
- 文件和證明
- 描述
SiC MOSFET module in transfer-molded package 1200 V 120 A Half-Bridge
• Automotive qualification
• Low inductance (
• Half-bridge configuration
• Si3N4 AMB Substrate
• Isolation 4000 V
• Ease of installation and parallel connection
• Low Rth(j-c), Rth(c-h) value
• Low static and dynamic losses
• High thermal cycling performance
- 应用范围
• Inverters for RES
• DC/DC converters, inverters
• Motor drives
• Electric transport
